Method to etch non-volatile metal materials
US-2015340603-A1 · Nov 26, 2015 · US
US8969982B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969982-B2 |
| Application number | US-92767010-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 19, 2010 |
| Priority date | Sep 28, 2006 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
Opening claim text (preview).
What is claimed is: 1. A bottom electrode for an MTJ device on a silicon nitride substrate having a top surface, comprising: on said top surface, a bilayer that comprises a nickel chrome portion on a tantalum containing portion; a layer of ruthenium on said bilayer; a layer of alpha tantalum on said ruthenium layer wherein said alpha tantalum layer has a roughness value that is no greater than about 5 Angstroms; said MTJ device being on said alpha tantalum layer; and a pro…
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