Variable capacitance element
US-2024266427-A1 · Aug 8, 2024 · US
US8969971B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969971-B2 |
| Application number | US-201314045034-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 3, 2013 |
| Priority date | Dec 13, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Semiconductor devices are provided. A semiconductor device may include a transistor area and a resistor area. The transistor area may include a gate structure. The resistor area may include an insulating layer and a resistor structure on the insulating layer. A top surface of the gate structure and a top surface of the resistor structure may be substantially coplanar.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a transistor area and a resistor area, wherein the transistor area comprises an active region in a substrate, and a gate structure on the active region, wherein the resistor area comprises a base insulating layer on a surface of the substrate, and a resistor structure on the base insulating layer, wherein the resistor structure comprises: a conductive resistor electrode on the base insulating layer; and an insulat…
Cross-Sectional Technologies · mapped topic
Electricity · mapped topic
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