ESD protection structure and semiconductor device comprising the same

US8969968B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8969968-B2
Application numberUS-201314141337-A
CountryUS
Kind codeB2
Filing dateDec 26, 2013
Priority dateDec 27, 2012
Publication dateMar 3, 2015
Grant dateMar 3, 2015

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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An ESD protection structure and a semiconductor device having an ESD protection structure with the ESD protection structure including a patterned conductive ESD protection layer. The ESD protection layer is patterned to have a first portion of a substantially closed ring shape having an outer contour line and an inner contour line parallel with each other. The outer and the inner contour lines are waved lines. The first portion further has a midline between and parallel with the outer and the inner contour lines. The midline is a waved line having a substantially constant curvature at each point of the midline. Therefore the ESD protection layer has a substantially uniform curvature and an increased perimeter which advantageously improve the breakdown voltage and the current handling capacity of the ESD protection structure.

First claim

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We claim: 1. An ESD protection structure comprising: a patterned conductive ESD protection layer including a first portion of a substantially closed ring shape, wherein the ring shaped first portion has an outer contour line and an inner contour line parallel with each other, and wherein the outer contour line and the inner contour line are waved lines; and wherein the first portion further has a midline located between the outer contour line and the inner contour line, wherein…

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What does patent US8969968B2 cover?
An ESD protection structure and a semiconductor device having an ESD protection structure with the ESD protection structure including a patterned conductive ESD protection layer. The ESD protection layer is patterned to have a first portion of a substantially closed ring shape having an outer contour line and an inner contour line parallel with each other. The outer and the inner contour lines …
Who is the assignee on this patent?
Chengdu Monolithic Power Sys, Chengdu Monolithic Power Sys
What technology area does this patent fall under?
Primary CPC classification H10W42/60. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).