Display Substrate, Display Substrate Motherboard and Display Apparatus
US-2024355831-A1 · Oct 24, 2024 · US
Power semiconductor device
US8969960B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969960-B2 |
| Application number | US-201214346466-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 7, 2012 |
| Priority date | Sep 21, 2011 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A power semiconductor device includes a second conductive type sense outer-peripheral well formed to surround a plurality of sense wells on the surface of a drift layer, a first conductive type main-cell source region selectively formed on the surface of the main cell well, a first conductive type sense source region selectively formed on the surface of the sense well, a first conductive type capacitor lower electrode region selectively formed on the surface of the sense outer-peripheral well, a gate insulation film formed on the channel regions and on the sense outer-peripheral well, a gate electrode formed on the gate insulation film, and a sense pad electrically connected to the sense well and the sense source region as well as on the sense outer-peripheral well and the capacitor lower electrode region.
First claim
Opening claim text (preview).
The invention claimed is: 1. A power semiconductor device comprising: a first conductive type drift layer formed on a first principal surface of a first conductive type silicon carbide semiconductor substrate; a plurality of second conductive type main cell wells and a plurality of second conductive type sense wells selectively formed on a surface of the drift layer; a second conductive type sense outer-peripheral well formed to surround the plurality of sense wells on the sur…
Assignees
Inventors
Classifications
Electricity · mapped topic
- H10W42/60Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D30/665Primary
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8969960B2 cover?
- A power semiconductor device includes a second conductive type sense outer-peripheral well formed to surround a plurality of sense wells on the surface of a drift layer, a first conductive type main-cell source region selectively formed on the surface of the main cell well, a first conductive type sense source region selectively formed on the surface of the sense well, a first conductive type c…
- Who is the assignee on this patent?
- Furukawa Akihiko, Kagawa Yasuhiro, Miura Naruhisa, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10W42/60. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).