Bonding method and bonding apparatus
US-11931995-B2 · Mar 19, 2024 · US
US8969959B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969959-B2 |
| Application number | US-201313795414-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2013 |
| Priority date | Dec 20, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a body layer of a first conductivity type; an active layer of a second conductivity type, contacting an upper portion of the body layer; and a field limiting ring of a first conductivity type, formed in an upper portion of the active layer.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a body layer of a first conductivity type; an active layer of a second conductivity type, contacting an upper portion of the body layer; a field limiting ring of a first conductivity type, formed in an upper portion of the active layer; and an anode layer of a high-concentration second conductivity type, formed in the upper portion of the active layer. 2. The semiconductor device of claim 1 , w…
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