Semiconductor memory device
US-2024334693-A1 · Oct 3, 2024 · US
Semiconductor device and method for manufacturing same
US8969941B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969941-B2 |
| Application number | US-201313772702-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 21, 2013 |
| Priority date | Jun 27, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
According to an embodiment, a semiconductor device, includes a semiconductor substrate, first and second transistors. The first transistor includes a first insulating film provided on the semiconductor substrate, a first conductive film provided on the first insulating film, a second insulating film provided on the first conductive film, and a second conductive film provided on the second insulating film. The second transistor is provided to be separated from the first transistor, the second transistor including a third insulating film provided on the semiconductor substrate, a third conductive film provided on the third insulating film, a fourth insulating film provided on the third conductive film, and a fourth conductive film provided on the fourth insulating film. The third conductive film is thicker than the first conductive film, and the second transistor has a through-portion piercing the fourth insulating film to connect the third conductive film and the fourth conductive film.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: at least one NAND string provided on an element region extending in a first direction in a surface of a semiconductor substrate, the NAND string comprising: a memory cell transistor having a stacked gate structure including a first insulating film provided part of the element region, a first conductive film provided on the first insulating film, a second insulating film provided on the first conductive film, and a seco…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10D30/0411Primary
Electricity · mapped topic
- H10D30/68Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969941B2 cover?
- According to an embodiment, a semiconductor device, includes a semiconductor substrate, first and second transistors. The first transistor includes a first insulating film provided on the semiconductor substrate, a first conductive film provided on the first insulating film, a second insulating film provided on the first conductive film, and a second conductive film provided on the second insul…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10D30/0411. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).