Electronic device based on multilayer thin film and method for manufacturing the same using a three-dimensional structure
US-2024309503-A1 · Sep 19, 2024 · US
US8969935B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969935-B2 |
| Application number | US-201213439423-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 4, 2012 |
| Priority date | Apr 4, 2011 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Disclosed herein is a device that includes a semiconductor substrate having a first area, a plurality of cell transistors arranged on the first area of the semiconductor substrate, and a plurality of cell capacitors each coupled to an associated one of the cell transistors, the cell capacitors being provided so as to overlap with one another on the first area.
Opening claim text (preview).
What is claimed is: 1. A semiconductor memory device comprising: a semiconductor substrate having a first area; a plurality of cell transistors arranged on the first area of the semiconductor substrate; a plurality of cell capacitors, each of the cell capacitors including a lower electrode, an upper electrode covering the lower electrode, and a capacitor insulating film provided between the lower electrode and upper electrode, the lower electrode being electrically connected t…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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