Replacement gate MOSFET with a high performance gate electrode

US8969933B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8969933-B2
Application numberUS-201313780877-A
CountryUS
Kind codeB2
Filing dateFeb 28, 2013
Priority dateOct 27, 2010
Publication dateMar 3, 2015
Grant dateMar 3, 2015

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Abstract

Official abstract text for this publication.

In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor structure comprising: a field effect transistor including a gate stack of a gate dielectric and a gate conductor, wherein said gate dielectric includes a dielectric material having a dielectric constant greater than 8.0 and includes a horizontal portion and a peripheral portion including sidewalls that protrude above a top planar surface of said horizontal portion and a concave surface that faces inward towards said horizontal portion; and…

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What does patent US8969933B2 cover?
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate …
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification H10D64/516. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).