Semiconductor structure with flush shallow trench isolation and gate oxide and method of manufacturing the same
US-2024395883-A1 · Nov 28, 2024 · US
US8969933B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969933-B2 |
| Application number | US-201313780877-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 28, 2013 |
| Priority date | Oct 27, 2010 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.
Opening claim text (preview).
What is claimed is: 1. A semiconductor structure comprising: a field effect transistor including a gate stack of a gate dielectric and a gate conductor, wherein said gate dielectric includes a dielectric material having a dielectric constant greater than 8.0 and includes a horizontal portion and a peripheral portion including sidewalls that protrude above a top planar surface of said horizontal portion and a concave surface that faces inward towards said horizontal portion; and…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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