Gate stack structure, semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-8969930-B2
Application number	US-201113321886-A
Country	US
Kind code	B2
Filing date	Apr 6, 2011
Priority date	Apr 7, 2010
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

A gate stack structure comprises an isolation dielectric layer formed on and embedded into a gate. A sidewall spacer covers opposite side faces of the isolation dielectric layer, and the isolation dielectric layer located on an active region is thicker than the isolation dielectric layer located on a connection region. A method for manufacturing the gate stack structure comprises removing part of the gate in thickness, the thickness of the removed part of the gate on the active region is greater than the thickness of the removed part of the gate on the connection region so as to expose opposite inner walls of the sidewall spacer; forming an isolation dielectric layer on the gate to cover the exposed inner walls. There is also provided a semiconductor device and a method for manufacturing the same. The methods can reduce the possibility of short-circuit occurring between the gate and the second contact hole and can be compatible with the dual-contact-hole process.

First claim

What is claimed is:

1. A gate stack structure, comprising:
a gate dielectric layer formed on an active region and on a connection region in a substrate;
a gate formed on the gate dielectric layer; and
a sidewall spacer surrounding the gate dielectric layer and the gate;
wherein the gate stack structure further comprising:
an isolation dielectric layer formed on the gate,
and wherein the sidewall spacer covers opposite side faces of the isolation dielectric layer, and the…

Assignees

• Yin Haizhou
• Luo Zhijiong
• Zhu Huilong
• Inst Of Microelectronics Cas

Inventors

• Yin Haizhou
• Luo Zhijiong
• Zhu Huilong

Classifications

• H10D64/01354 Primary

  Electricity · mapped topic

• H10D64/017

  Electricity · mapped topic

• H10D30/60

  Electricity · mapped topic

• H01L29/78

  Electricity · mapped topic

• H01L21/28247 Primary

  Electricity · mapped topic