Active matrix electroluminescent device within resin sealed housing

Patent metadata

Field	Value
Publication number	US-8969906-B2
Application number	US-201313862863-A
Country	US
Kind code	B2
Filing date	Apr 15, 2013
Priority date	Oct 13, 1998
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment.

First claim

What is claimed is:

1. A light emitting device comprising:
a gate wiring provided over a first substrate;
a gate insulating film adjacent to the gate wiring;
a semiconductor film adjacent to the gate insulating film;
a first insulating film formed over the semiconductor film;
a first metallic layer formed on and in contact with the first insulating film, the first wiring electrically connected to the semiconductor film;
a second insulating film comprising a resin over th…

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10K59/874

  Electricity · mapped topic

• H10K59/8722

  Electricity · mapped topic

• H10K59/871

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic

• H10D86/40

  Electricity · mapped topic