Display Device
US-2024290249-A1 · Aug 29, 2024 · US
US8969902B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969902-B2 |
| Application number | US-201313936032-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 5, 2013 |
| Priority date | Nov 26, 2007 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Official abstract text for this publication.
Disclosed are a semiconductor light emitting device. The semiconductor light emitting device comprises a light emitting structure comprising a III-V group compound semiconductor, a reflective layer comprising mediums, which are different from each other and alternately stacked under the light emitting structure, and a second electrode layer under the reflective layer.
Opening claim text (preview).
What is claimed is: 1. A semiconductor light emitting device comprising: a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a reflective structure comprising a first layer having a first refractive index and a second layer having a second refractive index different from the first refractive index under the light emitting st…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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