Optoelectronic semiconductor chip
US-2024204138-A1 · Jun 20, 2024 · US
US8969901B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969901-B2 |
| Application number | US-201313896166-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 16, 2013 |
| Priority date | May 17, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Official abstract text for this publication.
A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.
Opening claim text (preview).
What is claimed is: 1. A semiconductor light emitting device, comprising: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially laminated therein; and first and second electrodes electrically connected to the first and second conductivity-type semiconductor layers, respectively, wherein the second electrode comprises: a reflective pad portion disposed in a region of…
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