Light-emitting device
US-12155019-B2 · Nov 26, 2024 · US
Semiconductor light emitting device and manufacturing method thereof
US8969895B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969895-B2 |
| Application number | US-201113225979-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 6, 2011 |
| Priority date | Oct 25, 2010 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor light emitting device, comprising: a light emission structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially stacked; a first electrode disposed on the first conductive semiconductor layer; an insulating layer disposed on the second conductive semiconductor layer and made of a transparent material; a reflection unit disposed on the insulating layer and refle…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969895B2 cover?
- A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflect…
- Who is the assignee on this patent?
- Kim Jae Yoon, Lee Jin Bock, Hwang Seok Min, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10H20/831. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).