Semiconductor device
US-12057459-B2 · Aug 6, 2024 · US
US8969886B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969886-B2 |
| Application number | US-201313764179-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 11, 2013 |
| Priority date | Apr 24, 2002 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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An electro-optic display comprises a substrate ( 100 ), non-linear devices ( 102 ) disposed substantially in one plane on the substrate ( 100 ), pixel electrodes ( 106 ) connected to the non-linear devices ( 102 ), an electro-optic medium ( 110 ) and a common electrode ( 112 ) on the opposed side of the electro-optic medium ( 110 ) from the pixel electrodes ( 106 ). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices ( 102 ).
Opening claim text (preview).
The invention claimed is: 1. A backplane for an electro-optic display, the backplane comprising a plurality of pixel electrodes, and a plurality of ring diodes, one ring diode being associated with each pixel electrode, each ring diode comprising at least one organic layer, the backplane further comprising at least one column electrode in electrical contact with the plurality of ring diodes, the column electrode being narrower in width than the layer of each ring diode in immediate contact with the column electrode. 2. An electro-optic display comprising a backplane, the backplane comprising a plurality of pixel electrodes, and a plurality of ring diodes, one ring diode being associated with each pixel electrode, each ring diode comprising at least one organic layer, the display further comprising a layer of electro-optic medium disposed adjacent the backplane such that by varying the voltages on the pixel electrodes, the optical state of the electro-optic medium can be varied, the electro-optic medium having a threshold for switching. 3. A backplane for an electro-optic display, the backplane comprising a plurality of pixel electrodes, and a plurality of ring diodes, one ring diode being associated with each pixel electrode, and at least one column electrode in electrical contact with the plurality of ring diodes, the column electrode being narrower in width than the layer of each diode in immediate contact therewith. 4. A backplane according to claim 3 wherein the layer of each diode in immediate contact with the column electrode is organic. 5. A backplane according to claim 3 wherein at least one diode is a metal-insulator-metal diode. 6. An electro-optic display comprising a backplane according to claim 3 and a layer of electro-optic medium disposed adjacent the backplane such that by varying the voltages on the pixel electrodes, the optical state of the electro-optic medium can be varied, the electro-optic medium having a threshold for switching.
for Group V materials or Group III-V materials · CPC title
Chemical etching · CPC title
Formation of materials, e.g. in the shape of layers or pillars · CPC title
Interconnections, e.g. scanning lines · CPC title
having a particular composition, shape or crystalline structure of the active layer · CPC title
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