Semiconductor light device and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-8969883-B2
Application number	US-53448903-A
Country	US
Kind code	B2
Filing date	Nov 17, 2003
Priority date	Nov 16, 2002
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

The present invention discloses a light device and a fabrication method thereof. An object of the present invention is to provide the light device and the fabrication method thereof an electric/thermal/structural stability is obtained, and a P-type electrode and an N-type electrode can be simultaneously formed. In order to achieve the above object, the inventive light device includes: a GaN-based layer; a high concentration GaN-based layer formed on the GaN-based layer; a first metal-Ga compound layer formed on the high concentration GaN-based layer; a first metal layer formed on the first metal-Ga compound layer; a third metal-Al compound layer formed on the first metal layer; and a conductive oxidation preventive layer formed on the third metal-Al compound layer.

First claim

The invention claimed is:

1. A light emitting device, comprising:
an n-type conductive semiconductor layer;
an active layer formed on the n-type conductive semiconductor layer;
a p-type conductive semiconductor layer formed on the active layer and having a Ga vacancy;
a high concentration p-type GaN-based semiconductor layer configured to directly contact the p-type conductive semiconductor layer;
a first metal-Ga compound layer functioning as a first diffusion barrier;…

Assignees

• Choo Sung Ho
• Jang Ja Soon
• Lg Innotek Co Ltd

Inventors

• Choo Sung Ho
• Jang Ja Soon

Classifications

• H10H20/825

  Electricity · mapped topic

• H10H20/832 Primary

  Electricity · mapped topic

• H01L33/32

  Electricity · mapped topic

• Y10S257/918

  Cross-Sectional Technologies · mapped topic

• H01L33/40 Primary

  Electricity · mapped topic