Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
Semiconductor device and method for manufacturing the device
US8969878B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969878-B2 |
| Application number | US-201313733936-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 4, 2013 |
| Priority date | May 14, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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A semiconductor device includes a N-type field effect transistor comprising a N-channel region in a substrate. A high dielectric constant (high-k) layer is disposed on the N-channel region. A diffusion layer including a metal oxide is disposed on the high-k layer. A passivation layer is disposed on the diffusion layer, and a first metal gate is disposed on the passivation layer. The first high-k layer and the N-channel region include metal atoms of a metal element of the metal oxide.
First claim
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What is claimed is: 1. A semiconductor device comprising a N-type field effect transistor, the N-type field effect transistor comprising: a first high dielectric constant (high-k) layer disposed on a substrate; a first diffusion layer including a metal oxide disposed on the first high-k layer; a first passivation layer disposed on the first diffusion layer; and a first metal gate disposed on the first passivation layer, wherein the metal oxide is at least one of Y 2 O 3 ,…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D84/0177Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8969878B2 cover?
- A semiconductor device includes a N-type field effect transistor comprising a N-channel region in a substrate. A high dielectric constant (high-k) layer is disposed on the N-channel region. A diffusion layer including a metal oxide is disposed on the high-k layer. A passivation layer is disposed on the diffusion layer, and a first metal gate is disposed on the passivation layer. The first high-…
- Who is the assignee on this patent?
- Kim Ju-Youn, Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D84/0177. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).