Apparatus and electronic devices including transistors comprising two-dimensional materials
US-2024339543-A1 · Oct 10, 2024 · US
Semiconductor device
US8969877B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969877-B2 |
| Application number | US-201414148766-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 7, 2014 |
| Priority date | Sep 7, 2009 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed on the semiconductor layer and having a first portion that contacts the first region; a second portion that contacts the well region and that has a thickness that is the same as that of the first portion; and a third portion that contacts the second region and that has a thickness that is greater than that of the first portion; and a gate electrode formed on the gate insulating film and opposed to the channel region where a channel is formed through the gate insulating film.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device, comprising: a semiconductor layer made of first conductivity type SiC; a well region that is a second conductivity type well region formed on a surface layer portion of the semiconductor layer and that has a channel region defined therein; a source region that is a first conductivity type source region formed on a surface layer portion of the well region and that includes a first region defined adjacent to the well region an…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10P14/69391Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8969877B2 cover?
- A semiconductor device includes a semiconductor layer made of first conductivity type SiC; a second conductivity type well region formed on the semiconductor layer and having a channel region; a first conductivity type source region formed on the well region and including a first region adjacent to the well region and a second region adjacent to the first region; a gate insulating film formed o…
- Who is the assignee on this patent?
- Rohm Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P14/69391. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).