Gate isolation features and methods of fabricating the same in semiconductor devices
US-2024379673-A1 · Nov 14, 2024 · US
US8969876B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969876-B2 |
| Application number | US-201213660312-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 25, 2012 |
| Priority date | Nov 17, 2009 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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An array substrate includes first and second lines on a substrate and formed of a metallic material; a gate electrode connected to the first line; a gate insulating layer on the first and second lines and the gate electrode and including a groove exposing the substrate and positioned between the first and second lines; a semiconductor layer on the gate insulating layer and corresponding to the gate electrode; a data line crossing the first and second lines and on the gate insulating layer; a source electrode connected to the data line; a drain electrode spaced apart from the source electrode; a passivation layer on the data line, the source electrode and the drain electrode and including an opening, the opening exposing the gate insulating layer and the drain electrode; and a pixel electrode positioned on the gate insulating layer and in the opening and contacting the drain electrode.
Opening claim text (preview).
What is claimed is: 1. An array substrate for a liquid crystal display device, comprising: first and second lines on a substrate and spaced apart from each other, the first and second lines formed of a first metallic material; a gate electrode connected to the first line; a gate insulating layer on the first and second lines and the gate electrode and including a groove, the groove exposing the substrate and positioned between the first and second lines; a semiconductor laye…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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