Semiconductor device

Patent metadata

Field	Value
Publication number	US-8969867-B2
Application number	US-201313738443-A
Country	US
Kind code	B2
Filing date	Jan 10, 2013
Priority date	Jan 18, 2012
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

The semiconductor device includes a transistor including an oxide semiconductor film having a channel formation region, a gate insulating film, and a gate electrode layer. In the transistor, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the thickness of the gate insulating film is large (equivalent oxide thickness which is obtained by converting into a thickness of silicon oxide containing nitrogen is 5 nm or more and 50 nm or less, preferably 10 nm or more and 40 nm or less). Alternatively, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the resistivity of the source region and the drain region is 1.9×10 −5 Ω·m or more and 4.8×10 −3 Ω·m or less.

First claim

What is claimed is:

1. A semiconductor device comprising:
an oxide semiconductor film including a first region, a second region, and a channel formation region between the first region and the second region;
a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor film;
a gate electrode layer overlapping with the channel formation region; and
a gate insulating film between the oxide semiconductor film and the gate electrode layer…

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Matsubayashi Daisuke
• Okazaki Yutaka

Classifications

• H10D30/62

  Electricity · mapped topic

• H10D30/6757

  Electricity · mapped topic

• H10D30/6706

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic

• H01L29/7869 Primary

  Electricity · mapped topic