Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-8969866-B2
Application number	US-201113173484-A
Country	US
Kind code	B2
Filing date	Jun 30, 2011
Priority date	Jul 2, 2010
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

Provided is a structure to obtain a reliable electrical contact through a narrow contact hole formed in an insulating layer, which is required in the miniaturization of a semiconductor device. An exemplified structure includes a thin film transistor comprising: a lower electrode over and in contact with a semiconductor layer, the lower electrode comprising a metal or a metal compound; an insulating layer over the lower electrode, the insulating layer having a contact hole reaching the lower electrode; a conductive silicon whisker grown from a surface of the lower electrode; and an upper electrode over the insulating layer and in contact with the conductive silicon whisker. The ability of the conductive silicon whisker grown from the lower electrode to ohmically contact with the lower and upper electrodes leads to a reliable electrical contact between the thin film transistor and a wiring.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor layer;
a lower electrode over and in contact with the semiconductor layer;
an insulating layer over the lower electrode, the insulating layer comprising a contact hole which reaches the lower electrode;
a connection electrode in the contact hole, the connection electrode being in contact with the lower electrode and including a conductive silicon whisker; and
an upper electrode over the insulating layer, the upper electrode being electrically connected to the connection electrode,
wherein a first region of the connection electrode is in contact with a side surface of the insulating layer in the contact hole,
wherein a second region of the connection electrode is not in contact with the side surface of the insulating layer in the contact hole without bending toward the side surface it contacts, and
wherein the first region and the second region are in a side surface of the connection electrode.

2. The semiconductor device according to claim 1 ,
wherein the lower electrode includes a metal.

3. The semiconductor device according to claim 1 ,
wherein the lower electrode includes a metal compound which includes a semiconductor included in the semiconductor layer and a metal.

4. The semiconductor device according to claim 1 , further comprising a layer comprising a silicide between the lower electrode and the connection electrode.

5. The semiconductor device according to claim 1 , further comprising a layer comprising a silicide between the upper electrode and the connection electrode.

6. The semiconductor device according to claim 1 ,
wherein the connection electrode comprises an impurity.

7. The semiconductor device according to claim 1 ,
wherein the semiconductor layer further comprises at least one of a source region and a drain region overlapping with the lower electrode,
wherein the connection electrode a has a first type conductivity, and
wherein the one of the source region and the drain region has a second type conductivity which is different from the first type conductivity.

8. The semiconductor device according to claim 1 ,
wherein the semiconductor layer comprises an oxide semiconductor.

9. A semiconductor device comprising:
a semiconductor layer;
a first lower electrode and a second lower electrode each over and in contact with the semiconductor layer;
an insulating layer over the first lower electrode and the second lower electrode, the insulating layer comprising a first contact hole and a second contact hole which reach the first lower electrode and the second lower electrode, respectively;
a first connection electrode in contact with the first lower electrode in the first contact hole and a second connection electrode in contact with the second lower electrode in the second contact hole, each of the first connection electrode and the second connection electrode including a conductive silicon whisker; and
a first upper electrode and a second upper electrode over the insulating layer, the first upper electrode and the second upper electrode being electrically connected to the first connection electrode and the second connection electrode, respectively,
wherein a first region of the first connection electrode is in contact with a side surface of the insulating layer in the first contact hole without bending toward the side surface it contacts,
wherein a second region of the first connection electrode is not in contact with the side surface of the insulating layer in the first contact hole,
wherein a third region of the second connection electrode is in contact with a side surface of the insulating layer in the second contact hole with a side surface of the insulating layer in the second contact hole without bending toward the side surface it contacts,
wherein a fourth region of the second connection electrode is not in contact with the side surface of the insulating layer in the second contact hole,
wherein the first region and the second region are in a side surface of the first connection electrode, and
wherein the third region and the fourth region are in a side surface of the second connection electrode.

10. The semiconductor device according to claim 9 ,
wherein the first lower electrode and the second lower electrode include a metal.

11. The semiconductor device according to claim 9 ,
wherein the first lower electrode and the second lower electrode include a metal compound which includes a semiconductor included in the semiconductor layer and a metal.

12. The semiconductor device according to claim 9 , further comprising a layer comprising a silicide between the first lower electrode and the first connection electrode and between the second lower electrode and the second connection electrode.

13. The semiconductor device according to claim 9 , further comprising a layer comprising a silicide between the first upper electrode and the first connection electrode and between the second upper electrode and the second connection electrode.

14. The semiconductor device according to claim 9 ,
wherein the first connection electrode and the second connection electrode comprise an impurity.

15. The semiconductor device according to claim 9 ,
wherein the semiconductor layer further comprises a source region overlapping with the first lower electrode and a drain region overlapping with the second lower electrode,
wherein the first connection electrode and the second connection electrode have a first type conductivity, and
wherein the source region and the drain region have a second type conductivity which is different from the first type conductivity.

16. The semiconductor device according to claim 9 ,
wherein the semiconductor layer comprises an oxide semiconductor.

17. The semiconductor device according to claim 1 ,
wherein the conductive silicon whisker has a prism shape.

18. The semiconductor device according to claim 1 ,
wherein the conductive silicon whisker has a columnar shape.

19. The semiconductor device according to claim 1 ,
wherein the conductive silicon whisker is a single crystal.

20. The semiconductor device according to claim 9 ,
wherein each of the conductive silicon whiskers has a prism shape.

21. The semiconductor device according to claim 9 ,
wherein each of the conductive silicon whiskers has a columnar shape.

22. The semiconductor device according to claim 9 ,
wherein each of the conductive silicon whiskers is a single crystal.

23. The semiconductor device according to claim 1 ,
wherein the connection electrode includes a plurality of conductive silicon whiskers.

24. The semiconductor device according to claim 9 ,
wherein each of the first connection electrode and the second connection electrode includes a plurality of conductive silicon whiskers.

Assignees

• Yokoi Tomokazu
• Yoshizumi Kensuke
• Semiconductor Energy Lab

Inventors

• Yokoi Tomokazu
• Yoshizumi Kensuke

Classifications

• H10D64/0113

  the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers · CPC title

• H10W20/0554

  of nanotubes or nanowires · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/6743

  Silicon · CPC title