Display device and semiconductor device

Patent metadata

Field	Value
Publication number	US-8969859-B2
Application number	US-201313848878-A
Country	US
Kind code	B2
Filing date	Mar 22, 2013
Priority date	Jul 21, 2006
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.

First claim

What is claimed is:

1. A display device comprising:
a semiconductor layer including:
a first region containing a first impurity element that imparts one of n-type and p-type conductivity wherein the first region is one of a source region and a drain region;
a second region containing a second impurity element that imparts the one of n-type and p-type conductivity wherein the second region is the other of the source region and the drain region; and
a channel formation region b…

Assignees

• Semiconductor Energy Lab

Inventors

• Sato Mizuki

Classifications

• G02F1/1362

  Physics · mapped topic

• H10D30/6757

  Electricity · mapped topic

• H10K59/131

  Electricity · mapped topic

• H10D86/441 Primary

  Electricity · mapped topic

• H10D86/481

  Electricity · mapped topic