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US-2015380601-A1 · Dec 31, 2015 · US
Method of manufacturing photoelectric conversion device
US8969713B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969713-B2 |
| Application number | US-201213359606-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 27, 2012 |
| Priority date | Dec 24, 2008 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
Official abstract text for this publication.
Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A manufacturing method of a photoelectric conversion device, the method comprising: forming a protective layer on a front side of a semiconductor substrate; forming a first non-single crystalline semiconductor layer, a first conductive layer comprising a first impurity and a transparent conductive layer on a back side of the semiconductor substrate; forming a first collective electrode on a first portion of a back side of the transparent conductive layer…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10F77/211Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969713B2 cover?
- Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back s…
- Who is the assignee on this patent?
- Oh Min-Seok, Kim Jung-Tae, Song Nam-Kyu, and 13 more
- What technology area does this patent fall under?
- Primary CPC classification H10F77/211. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).