SiC semiconductor device
US-12080760-B2 · Sep 3, 2024 · US
Use of a conductive composition containing lead—tellurium-based oxide in the manufacture of semiconductor devices with lightly doped emitters
US8969709B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969709-B2 |
| Application number | US-201213598861-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 30, 2012 |
| Priority date | Aug 30, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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- Title
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Abstract
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The present invention provides a process for using a thick-film conductive paste composition to form an electrode on a silicon semiconductor device, e.g, a photovoltaic cell, containing a lightly doped emitter. The thick-film paste comprises a source of an electrically conductive metal and a Pb—Te-based oxide dispersed in an organic medium. Also provided are devices made by the process and a photovoltaic cell comprising a lightly doped emitter and an electrode formed from the thick-film conductive paste composition.
First claim
Opening claim text (preview).
What is claimed is: 1. A process for forming a photovoltaic cell, the process comprising: (a) providing a junction-bearing silicon semiconductor substrate having a front-side surface and a back-side surface and comprising one or more insulating films disposed onto at least said front-side surface of said silicon semiconductor substrate and a lightly doped emitter at said front-side surface of said silicon semiconductor substrate; (b) applying a thick-film conductive paste compos…
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Classifications
- H10D64/011Primary
Electricity · mapped topic
Electricity · mapped topic
- H10F77/211Primary
Electricity · mapped topic
- C03C8/10Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
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- What does patent US8969709B2 cover?
- The present invention provides a process for using a thick-film conductive paste composition to form an electrode on a silicon semiconductor device, e.g, a photovoltaic cell, containing a lightly doped emitter. The thick-film paste comprises a source of an electrically conductive metal and a Pb—Te-based oxide dispersed in an organic medium. Also provided are devices made by the process and a ph…
- Who is the assignee on this patent?
- Laughlin Brian J, Mikeska Kurt Richard, Torardi Carmine, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10D64/011. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).