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Double patterning via triangular shaped sidewall spacers
US8969205B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969205-B2 |
| Application number | US-201313852496-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 28, 2013 |
| Priority date | Mar 28, 2013 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
An intermediate semiconductor structure in fabrication includes a silicon semiconductor substrate, a hard mask of silicon nitride (SiN) over the substrate and a sacrificial layer of polysilicon or amorphous silicon over the hard mask. The sacrificial layer is patterned into sidewall spacers for mandrels of a filler material substantially different in composition from the sidewall spacers, such as a flowable oxide. The mandrels are removed such that the sidewall spacers have vertically tapered inner and outer sidewalls providing a rough triangular shape. The rough triangular sidewall spacers are used as a hard mask to pattern the SiN hard mask below.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method, comprising: providing an intermediate semiconductor structure, the structure comprising a semiconductor substrate and a sacrificial layer of a dummy gate material above the substrate; and creating sidewall spacers in the sacrificial layer, the creating comprising vertically tapering inner and outer sidewalls, such that the sidewall spacers have a rough triangular shape with a pointed tip. 2. The method of claim 1 , wh…
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Electricity · mapped topic
Electricity · mapped topic
- H10P50/695Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969205B2 cover?
- An intermediate semiconductor structure in fabrication includes a silicon semiconductor substrate, a hard mask of silicon nitride (SiN) over the substrate and a sacrificial layer of polysilicon or amorphous silicon over the hard mask. The sacrificial layer is patterned into sidewall spacers for mandrels of a filler material substantially different in composition from the sidewall spacers, such …
- Who is the assignee on this patent?
- Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P50/695. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).