Photoelectric conversion material
US-9224896-B2 · Dec 29, 2015 · US
Method for epitaxial layer overgrowth
US8969181B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969181-B2 |
| Application number | US-201213440616-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 5, 2012 |
| Priority date | Apr 11, 2011 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrinkage during annealing.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of workpiece processing comprising: selectively implanting ions into a plurality of implanted regions in a workpiece, wherein said ions comprise oxygen, silicon, germanium, carbon, or nitrogen; annealing said workpiece such that said ions are incorporated into said implanted regions; and forming a compound semiconductor on said workpiece, wherein said compound semiconductor grows over said implanted regions. 2. The method o…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969181B2 cover?
- Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrink…
- Who is the assignee on this patent?
- Godet Ludovic, Evans Morgan D, Hatem Christopher R, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/36. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).