Methods of fabricating a semiconductor device with capacitors using mold structure and protection layer

Patent metadata

Field	Value
Publication number	US-8969167-B2
Application number	US-201313952207-A
Country	US
Kind code	B2
Filing date	Jul 26, 2013
Priority date	Aug 29, 2012
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

A method of fabricating a semiconductor device with capacitors may include forming a mold structure on a lower structure, patterning the mold structure to form a plurality of holes exposing the lower structure, forming a protection layer on sidewalls of the mold structure exposed by the holes, forming lower electrodes in the holes provided with the protection layer, removing the mold structure to expose the protection layer, removing the protection layer to expose sidewalls of the lower electrodes, and sequentially forming a dielectric film and an upper electrode on the lower electrodes.

First claim

What is claimed is:

1. A method of fabricating a semiconductor device, comprising:
forming a mold structure on a lower structure;
patterning the mold structure to form a plurality of holes exposing the lower structure;
forming a protection layer on sidewalls of the mold structure exposed by the holes;
forming lower electrodes in the holes provided with the protection layer;
removing the mold structure to expose the protection layer;
removing the protection layer to expos…

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yoon Junho
• Kim Dongchan
• Min Gyungjin
• Park Jaehong
• Jang Yongmoon
• Han Je-Woo

Classifications

• H10D1/716 Primary

  Electricity · mapped topic

• H10B99/00

  Electricity · mapped topic

• H10B12/033 Primary

  Electricity · mapped topic

• H10D1/68 Primary

  Electricity · mapped topic

• H01L28/40 Primary

  Electricity · mapped topic