Semiconductor device
US-2024243196-A1 · Jul 18, 2024 · US
Semiconductor device and method for manufacturing the same
US8969150B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969150-B2 |
| Application number | US-201414324632-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 7, 2014 |
| Priority date | Mar 30, 2012 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
Official abstract text for this publication.
A trench gate type MISFET and a diode are formed in a semiconductor substrate. First and second trenches are formed in the semiconductor substrate. A gate electrode is formed in the first trench through a gate insulating film. A dummy gate electrode is formed in the second trench through a dummy gate insulating film. A cathode n + -type semiconductor region and an anode p-type semiconductor region are formed in the semiconductor substrate and the second trench is formed so as to surround the n + -type semiconductor region in a planar view. A part of the anode p-type semiconductor region is formed directly below the n + -type semiconductor region, so that a PN junction is formed between the part of the anode p-type semiconductor region and the n + -type semiconductor region. Thereby a diode is formed. The dummy gate electrode is electrically coupled to one of an anode and a cathode.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a semiconductor device including a trench gate type field effect transistor and a diode which are formed in a semiconductor substrate, the method comprising the steps of: (a) preparing the semiconductor substrate; (b) after the step (a), forming a first trench and a second trench in the semiconductor substrate; (c) after the step (b), forming a gate electrode of the trench gate type field effect transistor in the first trench t…
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Classifications
Electricity · mapped topic
- H10D64/513Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8969150B2 cover?
- A trench gate type MISFET and a diode are formed in a semiconductor substrate. First and second trenches are formed in the semiconductor substrate. A gate electrode is formed in the first trench through a gate insulating film. A dummy gate electrode is formed in the second trench through a dummy gate insulating film. A cathode n + -type semiconductor region and an anode p-type semiconductor reg…
- Who is the assignee on this patent?
- Renesas Electronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D64/513. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).