Graphene nano ribbons and methods of preparing the same

Patent metadata

Field	Value
Publication number	US-8968587-B2
Application number	US-201113153755-A
Country	US
Kind code	B2
Filing date	Jun 6, 2011
Priority date	Jun 4, 2010
Publication date	Mar 3, 2015
Grant date	Mar 3, 2015

Abstract

Methods of preparing graphene nano ribbons may include forming a graphene sheet on at least one surface of a substrate, forming a plasma mask having a nano pattern on the graphene sheet, and forming a nano pattern on the graphene sheet by plasma treating a stack structure on which the plasma mask is formed.

First claim

What is claimed is:

1. A method of preparing a graphene nano ribbon, the method comprising:
depositing a graphene sheet on at least one surface of a substrate;
forming a plasma mask with a nano ribbon pattern on the graphene sheet; and
forming a nano ribbon pattern in the graphene sheet by plasma treating a stack structure including the plasma mask to obtain a graphene nano ribbon,
wherein the forming of the plasma mask includes:
stacking amorphous carbon on the graphene sheet; and
forming the nano ribbon pattern in the amorphous carbon by irradiating the amorphous carbon with light to obtain the plasma mask.

2. The method of claim 1 , further comprising:
removing the plasma mask after the forming of the nano ribbon pattern in the graphene sheet.

3. The method of claim 2 , wherein the removing of the plasma mask includes thermally treating the stack structure including the plasma mask for about 10 minutes to about 5 hours at about 400-1200 ° C. in an atmosphere including at least one of O 2 , H 2 , CH 4 , C 2 H 4 , and C 2 H 2 .

4. The method of claim 1 , wherein the graphene sheet includes 1-10 layers of graphene.

5. The method of claim 1 , wherein the graphene sheet includes one of 1 and 2 layers of graphene.

6. The method of claim 1 , wherein the light irradiation of the amorphous carbon includes laser light irradiation.

7. The method of claim 1 , wherein the forming of the nano ribbon pattern in the graphene sheet includes controlling an intensity of the plasma based on a thickness of the graphene sheet.

8. The method of claim 1 , wherein the substrate includes at least one of a silicon (Si) substrate, a glass substrate, a GaN substrate, a silica substrate, and a metal substrate including at least one of nickel (Ni), cobalt (Co), iron (Fe), platinum (Pt), palladium (Pd), gold (Au), aluminum (Al), chromium (Cr), copper (Cu), manganese (Mn), molybdenum (Mo), rhodium (Rh), iridium (Ir), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), and zirconium (Zr).

9. The method of claim 1 , wherein the depositing of the graphene sheet includes depositing the graphene sheet with an area of equal to or greater than about 1 cm 2 .

10. The method of claim 1 , wherein the depositing of the graphene sheet includes depositing the graphene sheet with less than or equal to 10 wrinkles per 1000μm 2 of graphene.

11. The method of claim 1 , wherein graphene sheet includes greater than or equal to 99% graphene per 1 mm 2 of the graphene sheet.

12. A method of preparing a grapheme nano ribbon, the method comprising:
forming a carbon mask on a graphene sheet, the carbon mask comprising a carbon layer including amorphous carbon, the graphene sheet including at least one graphene layer, and
plasma treating the graphene sheet to form a graphene nano ribbon.

13. The method of claim 12 , further comprising:
thermally treating the graphene nano ribbon and the carbon mask to remove the carbon mask.

14. The method of claim 12 , wherein the forming of the carbon mask includes irradiating the carbon layer with a laser without the presence of a photoresist to form the carbon mask.

15. The method of claim 12 , wherein the forming of the carbon mask includes depositing the carbon layer using chemical vapor deposition (CVD).

Assignees

• Shin Hyeon-Jin
• Choi Jae-Young
• Lee Young-Hee
• Han Gang-Hee
• Samsung Electronics Co Ltd

Inventors

• Shin Hyeon-Jin
• Choi Jae-Young
• Lee Young-Hee
• Han Gang-Hee

Classifications

• H10D30/6741

  Group IV materials, e.g. germanium or silicon carbide (TFTs having oxide semiconductors H10D30/6755) · CPC title

• H10D30/031

  of thin-film transistors [TFT] · CPC title

• H01L29/66742

  Electricity · mapped topic

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• H01L51/0016

  Electricity · mapped topic