Film forming material for lithography, composition, underlayer film for lithography, and method for forming pattern
US-2024319600-A1 · Sep 26, 2024 · US
Composition for resist underlayer film and process for producing same
US8968458B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8968458-B2 |
| Application number | US-71540610-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 2, 2010 |
| Priority date | Mar 1, 2005 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Abstract
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A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R 1 b R 2 c Si(OR 3 ) 4-a (A) wherein R 1 is a monovalent organic group having at least one unsaturated bond, R 2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R 3 individually represents a monovalent organic group, R 1 is a group other than OR 3 , a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.
First claim
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The invention claimed is: 1. A composition for a resist underlayer film comprising a hydrolyzate and/or a condensate of a mixture consisting of: at least two kinds of silane compounds represented by the following formula (A); at least one silane compound represented by the following formula (B); and at least one silane compound represented by the following formula (C), R 1 b R 2 c Si(OR 3 ) 4-a (A) Si(OR 3 ) 4 (B) (R 4 ) d Si(OR 3 ) 4-d (C) wherein,…
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Electricity · mapped topic
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
- G03F7/0752Primary
Physics · mapped topic
Physics · mapped topic
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- What does patent US8968458B2 cover?
- A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a…
- Who is the assignee on this patent?
- Konno Keiji, Tanaka Masato, Ishii Momoko, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification G03F7/0752. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Mar 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).