Logic drive using standard commodity programmable logic ic chips comprising non-volatile random access memory cells
US-2024380401-A1 · Nov 14, 2024 · US
US8964459B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8964459-B2 |
| Application number | US-201313781739-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 28, 2013 |
| Priority date | Mar 22, 2012 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, a non-magnetic layer formed between the first magnetic layer and the second magnetic layer, a charge storage layer having a first surface and a second surface different from the first surface, the first surface facing the second magnetic layer, a first insulating layer formed between the second magnetic layer and the first surface of the charge storage layer, and a second insulating layer formed on the second surface of the charge storage layer.
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What is claimed is: 1. A magnetoresistive element, comprising: a first magnetic layer; a second magnetic layer; a non-magnetic layer formed between the first magnetic layer and the second magnetic layer; a charge storage layer having a first surface and a second surface different from the first surface, the first surface facing the second magnetic layer; a first insulating layer formed between the second magnetic layer and the first surface of the charge storage layer; and…
Physics · mapped topic
Physics · mapped topic
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