Magnetoresistive element and writing method of magnetic memory

US8964459B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8964459-B2
Application numberUS-201313781739-A
CountryUS
Kind codeB2
Filing dateFeb 28, 2013
Priority dateMar 22, 2012
Publication dateFeb 24, 2015
Grant dateFeb 24, 2015

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Abstract

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According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, a non-magnetic layer formed between the first magnetic layer and the second magnetic layer, a charge storage layer having a first surface and a second surface different from the first surface, the first surface facing the second magnetic layer, a first insulating layer formed between the second magnetic layer and the first surface of the charge storage layer, and a second insulating layer formed on the second surface of the charge storage layer.

First claim

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What is claimed is: 1. A magnetoresistive element, comprising: a first magnetic layer; a second magnetic layer; a non-magnetic layer formed between the first magnetic layer and the second magnetic layer; a charge storage layer having a first surface and a second surface different from the first surface, the first surface facing the second magnetic layer; a first insulating layer formed between the second magnetic layer and the first surface of the charge storage layer; and…

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What does patent US8964459B2 cover?
According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, a non-magnetic layer formed between the first magnetic layer and the second magnetic layer, a charge storage layer having a first surface and a second surface different from the first surface, the first surface facing the second magnetic layer, a first insulating layer formed betwee…
Who is the assignee on this patent?
Toshiba Kk
What technology area does this patent fall under?
Primary CPC classification G11C11/161. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).