Neural network computation circuit, control circuit therefor, and control method therefor
US-2024411520-A1 · Dec 12, 2024 · US
US8964448B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8964448-B2 |
| Application number | US-201213570772-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 9, 2012 |
| Priority date | Aug 9, 2012 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Resistance variable memory cells having a plurality of resistance variable materials and methods of operating and forming the same are described herein. As an example, a resistance variable memory cell can include a plurality of resistance variable materials located between a plug material and an electrode material. The resistance variable memory cell also includes a first conductive material that contacts the plug material and each of the plurality of resistance variable materials and a second conductive material that contacts the electrode material and each of the plurality of resistance variable materials.
Opening claim text (preview).
What is claimed is: 1. A resistance variable memory cell, comprising: a plurality of resistance variable materials formed between a plug material and an electrode material, wherein each of the plurality of resistance variable materials has a different respective thickness; a first conductive material that contacts the plug material and each of the plurality of resistance variable materials; and a second conductive material that contacts the electrode material and each of the p…
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