Method of forming semiconductor devices
US-2024387980-A1 · Nov 21, 2024 · US
Silicon-based suspending antenna with photonic bandgap structure
US8963779B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963779-B2 |
| Application number | US-201113034025-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 24, 2011 |
| Priority date | Nov 8, 2010 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
The disclosure provides a silicon-based suspending antenna with photonic bandgap structure, which includes a silicon substrate, an electrode layer, a spacing part and an F-shaped structure. The silicon substrate has a first side surface and a second side surface oppositing to the first surface. The electrode layer has a flat part, a first base and at least one second base, in which one side of the flat part has a notch, the first base, the second base and the notch are separately disposed on the second side surface and essentially parallel to the longitudinal edge of the second side surface, the first base has a main body and an extension, and the extension extends from the main body and into the notch. The F-shaped structure has a longitudinal part disposed on the spacing part and is parallel to the second side surface.
First claim
Opening claim text (preview).
What is claimed is: 1. A silicon-based suspending antenna with photonic bandgap structure, comprising: a silicon substrate, having a first side surface and a second side surface oppositing to the first surface, the first side surface having a plurality of regular recesses for restraining spurious wave of the silicon-based suspending antenna and the second side surface having a longitudinal edge; an electrode layer, having a flat part, a first base and at least one second base, o…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01Q1/38Primary
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8963779B2 cover?
- The disclosure provides a silicon-based suspending antenna with photonic bandgap structure, which includes a silicon substrate, an electrode layer, a spacing part and an F-shaped structure. The silicon substrate has a first side surface and a second side surface oppositing to the first surface. The electrode layer has a flat part, a first base and at least one second base, in which one side of …
- Who is the assignee on this patent?
- Huang I-Yu, Sun Chian-Hao, Hsu Kuo-Yi, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H01Q1/38. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).