Semiconductor device
US-2024429154-A1 · Dec 26, 2024 · US
US8963344B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963344-B2 |
| Application number | US-201013514110-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 29, 2010 |
| Priority date | Dec 7, 2009 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Official abstract text for this publication.
An epoxy resin composition for semiconductor encapsulation of the present invention contains an epoxy resin (A) and a curing agent (B) and is used to encapsulate a copper wire ( 4 ) and a semiconductor element ( 1 ) connected to this copper wire ( 4 ). This epoxy resin composition is such that when a cured product of the epoxy resin composition is heated for 10 hours at 200° C., the amount of generation of a first corrosive gas that is a sulfur compound having corrosiveness to the copper wire ( 4 ) is less than or equal to 70 ppm.
Opening claim text (preview).
The invention claimed is: 1. An epoxy resin composition for semiconductor encapsulation, comprising an epoxy resin and a curing agent, said composition used for encapsulating a copper wire and a semiconductor element connected to the copper wire, wherein a cured product of the epoxy resin composition for semiconductor encapsulation is heated for 10 hours at 200° C., the amount of generation of a first corrosive gas that is a sulfur compound having corrosiveness to the copper wire…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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