Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
US8963335B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963335-B2 |
| Application number | US-201213613611-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 13, 2012 |
| Priority date | Sep 13, 2012 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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A composite interposer can include a substrate element and a support element. The substrate element can have first and second opposite surfaces defining a thickness of 200 microns or less, and can have a plurality of contacts exposed at the first surface and electrically conductive structure extending through the thickness. The support element can have a body of at least one of dielectric or semiconductor material exposed at a second surface of the support element, openings extending through a thickness of the body, conductive vias extending within at least some of the openings in a direction of the thickness of the body, and terminals exposed at a first surface of the support element. The second surface of the support element can be united with the second surface of the substrate element. The terminals can be electrically connected with the contacts through the conductive vias and the electrically conductive structure.
Opening claim text (preview).
The invention claimed is: 1. A composite interposer, comprising: a substrate element consisting essentially of at least one of dielectric or semiconductor material, the substrate element having first and second opposite surfaces defining a thickness of 200 microns or less, and having a plurality of contacts exposed at the first surface and electrically conductive structure extending through the thickness; and a support element having: a body of at least one of dielectric or sem…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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