Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
US-2024234132-A1 · Jul 11, 2024 · US
Circuit structures and electronic systems
US8963330B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963330-B2 |
| Application number | US-201213401534-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 21, 2012 |
| Priority date | Sep 1, 2005 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
The invention includes methods of forming layers conformally over undulating surface topographies associated with semiconductor substrates. The undulating surface topographies can first be exposed to one or more of titanium oxide, neodymium oxide, yttrium oxide, zirconium oxide and vanadium oxide to treat the surfaces, and can be subsequently exposed to a material that forms a layer conformally along the treated surfaces. The material can, for example, comprise an aluminum-containing compound and one or both of silane and silazane. The invention also includes semiconductor constructions having conformal layers formed over liners containing one or more of titanium oxide, yttrium oxide, zirconium oxide and vanadium oxide.
First claim
Opening claim text (preview).
The invention claimed is: 1. A circuit structure comprising: a substrate; an electrically insulative material over the substrate and having an undulating outer surface and an activated region below the undulating outer surface, wherein the activated region comprises the electrically insulative material and one or more oxides; an electrically conductive material over and extending conformally along the undulating outer surface; and wherein the activated region extends inward…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8963330B2 cover?
- The invention includes methods of forming layers conformally over undulating surface topographies associated with semiconductor substrates. The undulating surface topographies can first be exposed to one or more of titanium oxide, neodymium oxide, yttrium oxide, zirconium oxide and vanadium oxide to treat the surfaces, and can be subsequently exposed to a material that forms a layer conformally…
- Who is the assignee on this patent?
- Smythe John, Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P14/6922. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).