Semiconductor device
US-2024128187-A1 · Apr 18, 2024 · US
US8963288B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963288-B2 |
| Application number | US-201313740805-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 14, 2013 |
| Priority date | Jan 14, 2013 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Official abstract text for this publication.
An electrostatic discharge (ESD) protection circuit is coupled between first and second pads to protect an internal circuit therebetween. Under a normal operating condition, a voltage on the first pad is higher than that on the second pad. The ESD protection circuit includes a substrate of a first conductivity type; first well of a second conductivity type in the substrate, wherein the first well is coupled to the first pad; a snapback device housed in the first well; and a diode string in the substrate, connected in series with the snapback device and separated from the first well, wherein the serially connected diode string and snapback device is connected between the first pad and the second pad. With the isolation from the first well, the holding voltage of the ESD protection circuit can be tuned by adjusting the number of diodes in the diode string without using a guard ring.
Opening claim text (preview).
What is claimed is: 1. An electrostatic discharge (ESD) protection circuit coupled between a first pad and a second pad, a voltage on the first pad being higher than a voltage on the second pad under operation, wherein the ESD protection circuit comprises: a substrate of a first conductivity type; a first well of a second conductivity type in the substrate, wherein the first well is coupled to the first pad; a snapback device housed in the first well; and a diode string in t…
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