Semiconductor device and method of manufacturing thereof

Patent metadata

Field	Value
Publication number	US-8963285-B2
Application number	US-201313790117-A
Country	US
Kind code	B2
Filing date	Mar 8, 2013
Priority date	Mar 8, 2013
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

A semiconductor device includes a semiconductor substrate having a first main surface in which a recess is formed. Further, the semiconductor device includes an electrical interconnect structure which is arranged at a bottom of the recess. A semiconductor chip is located in the recess. The semiconductor chip includes a plurality of chip electrodes facing the electrical interconnect structure. Further, a plurality of electrically conducting elements is arranged in the electrical interconnect structure and electrically connected to the plurality of chip electrodes.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor substrate having a first main surface which comprises a recess;
an electrical interconnect structure arranged at a bottom of the recess, wherein the electrical interconnect structure comprises an insulating layer disposed on the semiconductor substrate;
a semiconductor chip located in the recess, wherein the semiconductor chip comprises a plurality of chip electrodes facing the electrical interconnect s…

Assignees

• Infineon Technologies Ag

Inventors

• Bakalski Winfried
• Steltenpohl Anton

Classifications

• H10W72/0198

  Electricity · mapped topic

• H10P54/00

  Electricity · mapped topic

• H10W90/724

  Electricity · mapped topic

• H10W40/228

  Electricity · mapped topic

• H10W40/22

  Electricity · mapped topic