Semiconductor die, semiconductor package and substrate dicing method
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Crack stop structure and method for forming the same
US8963282B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963282-B2 |
| Application number | US-201113231961-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 14, 2011 |
| Priority date | Sep 14, 2011 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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- Title
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Abstract
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A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in a form of a grid to form a crack stop structure.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor structure, comprising: a substrate comprising a scribe line region and a die region; a die disposed within said die region; a scribe line disposed within said scribe line region; a dielectric stack overlying the scribe line region and a die region; a first crack stop trench in said scribe line region, wherein said first crack stop trench extends through the dielectric stack and recesses into said substrate, wherein said first crack st…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8963282B2 cover?
- A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is pa…
- Who is the assignee on this patent?
- Huang Tse-Yao, Chen Yi-Nan, Liu Hsien-Wen, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10W42/121. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).