Image sensor and manufacturing process thereof
US-2024347559-A1 · Oct 17, 2024 · US
US8963271B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963271-B2 |
| Application number | US-201113823057-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 20, 2011 |
| Priority date | Sep 30, 2010 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Official abstract text for this publication.
In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.
Opening claim text (preview).
The invention claimed is: 1. A solid-state imaging device comprising: a pixel array including a plurality of pixels, each including a photoelectric conversion unit; a transfer unit configured to transfer signal electric charges of the photoelectric conversion unit to a floating node; a reset unit configured to set an electric potential of the floating node to a reference electric potential; an amplifying unit configured to amplify a signal based on the signal electric char…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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