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US-2024381034-A1 · Nov 14, 2024 · US
Capacitive transducer and methods of manufacturing and operating the same
US8963261B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963261-B2 |
| Application number | US-201213591845-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 22, 2012 |
| Priority date | Aug 22, 2011 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
Provided are a capacitive transducer, and methods of manufacturing and operating the same. The capacitive transducer includes: a monolithic substrate comprising a first doping region, a second doping region that is opposite in conductivity to the first doping region, and a vibrating portion; and an empty space that is disposed between the first doping region and the vibrating portion. The vibrating portion includes a plurality of through-holes, and a material film for sealing the plurality of through-holes is disposed on the vibrating portion.
First claim
Opening claim text (preview).
What is claimed is: 1. A transducer comprising: a monolithic substrate comprising: a first doping region; a second doping region that is opposite in conductivity to the first doping region, the second doping region comprising a first vibrating portion; and a first empty space between the first doping region and the first vibrating portion. 2. The transducer of claim 1 , wherein the first vibrating portion comprises a plurality of first through-holes.…
Assignees
Inventors
Classifications
Operations & Transport · mapped topic
- B81B3/0021Primary
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
- H04R19/00Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8963261B2 cover?
- Provided are a capacitive transducer, and methods of manufacturing and operating the same. The capacitive transducer includes: a monolithic substrate comprising a first doping region, a second doping region that is opposite in conductivity to the first doping region, and a vibrating portion; and an empty space that is disposed between the first doping region and the vibrating portion. The vibra…
- Who is the assignee on this patent?
- Kim Che-Heung, Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification B81B3/0021. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).