Device isolation in finFET CMOS

Patent metadata

Field	Value
Publication number	US-8963259-B2
Application number	US-201313906852-A
Country	US
Kind code	B2
Filing date	May 31, 2013
Priority date	May 31, 2013
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

Embodiments herein provide approaches for device isolation in a complimentary metal-oxide fin field effect transistor. Specifically, a semiconductor device is formed with a retrograde doped layer over a substrate to minimize a source to drain punch-through leakage. A set of replacement fins is formed over the retrograde doped layer, each of the set of replacement fins comprising a high mobility channel material (e.g., silicon, or silicon-germanium). The retrograde doped layer may be formed using an in situ doping process or a counter dopant retrograde implant. The device may further include a carbon liner positioned between the retrograde doped layer and the set of replacement fins to prevent carrier spill-out to the replacement fins.

First claim

What is claimed is:

1. A semiconductor device comprising:
a retrograde doped layer formed over a substrate, the retrograde doped layer comprising one of: doped silicon (Si), and doped silicon-germanium (Si—Ge);
a set of replacement fins formed over the retrograde doped layer, each of the set of replacement fins comprising a high mobility channel material; and
a carbon liner between the retrograde doped layer and the set of replacement fins.

2. The semiconductor device according to claim 1 , further comprising a set of silicon fins adjacent the set of replacement fins, the set of silicon fins formed over the retrograde doped layer.

3. The semiconductor device according to claim 1 , wherein the high mobility channel material comprises at least one of: Si, and Si—Ge.

Assignees

• Globalfoundries Inc
• IBM
• Renesas Electronics Corp

Inventors

• Jacob Ajey P
• Akarvardar Murat K
• Bentley Steven J
• Nagumo Toshiharu
• Cheng Kangguo
• Doris Bruce B
• Khakifirooz Ali

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P30/22

  using masks · CPC title

• H10P14/6302

  Non-deposition formation processes · CPC title

• H10P14/3438

  Doping during depositing · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title