Bi-directional bipolar junction transistor for high voltage electrostatic discharge protection

Patent metadata

Field	Value
Publication number	US-8963253-B2
Application number	US-201213658295-A
Country	US
Kind code	B2
Filing date	Oct 23, 2012
Priority date	Oct 23, 2012
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

A bi-directional electrostatic discharge (ESD) protection device may include a substrate, an N+ doped buried layer, an N-type well region and two P-type well regions. The N+ doped buried layer may be disposed proximate to the substrate. The N-type well region may encompass the two P-type well regions such that a portion of the N-type well region is interposed between the two P-type well regions. The P-type well regions may be disposed proximate to the N+ doped buried layer and comprise one or more N+ doped plates, one or more P+ doped plates, one or more field oxide (FOX) portions, and one or more field plates. A multi-emitter structure is also provided.

First claim

What is claimed is:

1. A bi-directional bipolar junction transistor (BJT) comprising:
a p-type substrate;
an N+ doped buried layer disposed adjacent to the substrate;
a first P-type well region disposed adjacent to the N+ doped buried layer, wherein the first p-type well region is in contact with the N+ doped buried layer;
a second P-type well region disposed adjacent to the N+ doped buried layer, wherein the second p-type well region is in contact with the N+ doped buried l…

Assignees

• Macronix Int Co Ltd

Inventors

• Chen Hsin-Liang
• Tu Shuo-Lun

Classifications

• H10D84/01

  Electricity · mapped topic

• H10W42/80 Primary

  Electricity · mapped topic

• H10D89/713 Primary

  Electricity · mapped topic

• H10D18/251

  Electricity · mapped topic

• H01L21/70

  Electricity · mapped topic