Semiconductor device and method for forming the same

Patent metadata

Field	Value
Publication number	US-8963252-B2
Application number	US-201213618127-A
Country	US
Kind code	B2
Filing date	Sep 14, 2012
Priority date	Nov 7, 2011
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

Semiconductor devices and methods of forming the same are provided. The semiconductor device may include a semiconductor element disposed on a substrate and including an insulating layer and a gate electrode, a doped region having a first conductivity-type on the substrate, a conductive interconnection electrically connected to the gate electrode, and a first contact plug having a second conductivity-type and electrically connecting the conductive interconnection and the doped region to each other and constituting a Zener diode by junction with the doped region.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor element on a substrate, the semiconductor element including an insulating layer and a gate electrode;
a doped region having a first conductivity-type on the substrate;
a conductive interconnection electrically connected to the gate electrode; and
a first contact plug having a second conductivity-type, the first contact plug electrically connecting the conductive interconnection and the doped region to each other and constituting a Zener diode at a junction with the doped region.

2. The semiconductor device as set forth in claim 1 , wherein the first conductivity-type is high-concentration P-type, and the second conductivity-type is high-concentration N-type.

3. The semiconductor device as set forth in claim 1 , further comprising:
a second contact plug connecting the gate electrode and the conductive interconnection to each other.

4. The semiconductor device as set forth in claim 3 , wherein the first and second contact plugs are formed in a same process for forming a plug.

5. The semiconductor device as set forth in claim 1 , wherein the doped region is in a first region, the first region being apart from a second region in which the semiconductor element is formed.

6. The semiconductor device as set forth in claim 1 , wherein the doped region has substantially a same concentration as a source/drain of the semiconductor element.

7. The semiconductor device as set forth in claim 1 , wherein doping concentrations of the first contact plug and the doped region are such that a breakdown voltage of the Zener diode is in the range of about 3.5 to 10 volt.

8. The semiconductor device as set forth in claim 1 , wherein a junction surface of the Zener diode is determined by a cross-sectional area of the first contact plug.

9. A semiconductor device comprising:
a semiconductor element on a substrate;
a doped region on the substrate, the doped region having a first conductivity-type; and
a doped element projecting from the substrate, the doped element having a second conductivity-type, and the doped element contacting the doped region to form a Zener diode and electrically connected to the semiconductor element, wherein the doped element is connected to a gate electrode of the semiconductor element.

10. The semiconductor device as set forth in claim 9 , wherein the first conductivity-type is P-type, and the second conductivity-type is N-type.

11. The semiconductor device as set forth in claim 9 , wherein doping concentrations of the doped element and the doped region are such that a breakdown voltage of the Zener diode is in the range of about 3.5 to 10 volt.

12. The semiconductor device as set forth in claim 9 , further comprising:
a conductive line between the semiconductor element and the doped element.

13. The semiconductor device as set forth in claim 12 , wherein the conductive line includes at least one metal line.

14. The semiconductor device as set forth in claim 9 , wherein the doped element is a contact plug.

15. The semiconductor device as set forth in claim 9 , wherein the first conductivity-type is one of high-concentration P-type and high-concentration N-type, and the second conductivity-type is the other one of high-concentration P-type and high-concentration N-type.

Assignees

• Kim Moojin
• Lee Jeongyun
• Samsung Electronics Co Ltd

Inventors

• Kim Moojin
• Lee Jeongyun

Classifications

• H10D30/6217

  having non-uniform gate electrodes, e.g. gate conductors having varying doping · CPC title

• H10D30/6213

  having rounded corners · CPC title

• H10D30/66

  Vertical DMOS [VDMOS] FETs · CPC title

• H10D30/0291

  of vertical DMOS [VDMOS] FETs · CPC title

• H10D84/811

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title