Power semiconductor device and method for producing a power semiconductor device
US-2024170566-A1 · May 23, 2024 · US
US8963245B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963245-B2 |
| Application number | US-201313960262-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 6, 2013 |
| Priority date | Jan 16, 2006 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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An integrated circuit and component is disclosed. In one embodiment, the component is a compensation component, configuring the compensation regions in the drift zone in V-shaped fashion in order to achieve a convergence of the space charge zones from the upper to the lower end of the compensation regions is disclosed.
Opening claim text (preview).
What is claimed is: 1. A lateral component comprising: a semiconductor body having a main surface; a body zone in the semiconductor body, the body zone extending between at least one first electrode for a first zone of a first conductivity type and a second electrode—for a second zone arranged at a distance from the first electrode, the body zone adjoining the first electrode and being—of a second conductivity type, which is opposite to the first conductivity type; a drift zon…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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