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Semiconductor device, integrated circuit and method of manufacturing a semiconductor device
US8963244B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963244-B2 |
| Application number | US-201313894751-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 15, 2013 |
| Priority date | May 15, 2013 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Abstract
Official abstract text for this publication.
A semiconductor device includes a transistor. The transistor includes a source region, a drain region, a body region, a drift zone, and a gate electrode adjacent to the body region. The body region, the drift zone, the source region and the drain region are disposed in a first semiconductor layer having a first main surface. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. Trenches are disposed in the first semiconductor layer, the trenches extending in the first direction. The transistor further includes a drift control region arranged adjacent to the drift zone. The drift control region and the gate electrode are disposed in the trenches.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a transistor, the transistor comprising a body region, a drift zone, a source region and a drain region in a first semiconductor layer having a first main surface, the body region and the drift zone being disposed between the source region and the drain region, the source region, the body region, the drift zone and the drain region being disposed along a first direction, the first direction being parallel to the first main…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8963244B2 cover?
- A semiconductor device includes a transistor. The transistor includes a source region, a drain region, a body region, a drift zone, and a gate electrode adjacent to the body region. The body region, the drift zone, the source region and the drain region are disposed in a first semiconductor layer having a first main surface. The body region and the drift zone are disposed along a first directio…
- Who is the assignee on this patent?
- Infineon Technologies Austria
- What technology area does this patent fall under?
- Primary CPC classification H10D30/0289. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).