Strongly correlated nonvolatile memory element

Patent metadata

Field	Value
Publication number	US-8963221-B2
Application number	US-201414231845-A
Country	US
Kind code	B2
Filing date	Apr 1, 2014
Priority date	Oct 19, 2011
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

In aspects of the invention, a strongly correlated nonvolatile memory element is provided which exhibits phase transitions and nonvolatile switching functions through electrical means. In an aspect of the invention, a strongly correlated nonvolatile memory element is provided including, on a substrate, a channel layer, a gate electrode, a gate insulator, a source electrode, and a drain electrode. The channel layer includes a strongly correlated oxide thin film, and is formed of a perovskite type manganite which exhibits a charge-ordered phase or an orbital-ordered phase; the gate insulator is formed in contact with at least a portion of a surface or interface of the channel layer and is sandwiched between the channel layer and the gate electrode, and the source electrode and drain electrode are formed in contact with at least a portion of the channel layer.

First claim

What is claimed is:

1. A strongly correlated nonvolatile memory element, comprising, on a substrate:
a channel layer including a strongly correlated oxide thin film;
a gate electrode;
a gate insulator formed in contact with at least a portion of a surface or interface of the channel layer and sandwiched between the channel layer and the gate electrode; and
a source electrode and a drain electrode formed in contact with at least a portion of the channel layer, wherein
the c…

Assignees

• Fuji Electric Co Ltd

Inventors

• Ogimoto Yasushi

Classifications

• G11C2213/53

  Physics · mapped topic

• H10N70/8836

  Electricity · mapped topic

• H10N70/253 Primary

  Electricity · mapped topic

• H10N70/235

  Electricity · mapped topic

• H10N50/10

  Electricity · mapped topic