Semiconductor device

Patent metadata

Field	Value
Publication number	US-8963207-B2
Application number	US-201414188462-A
Country	US
Kind code	B2
Filing date	Feb 24, 2014
Priority date	Feb 25, 2013
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

A semiconductor device includes a buffer layer, a channel layer and a barrier layer formed over a substrate, a trench penetrating through the barrier layer to reach the middle of the channel layer, and a gate electrode disposed inside the trench via a gate insulating film. The channel layer contains n-type impurities, and a region of the channel layer positioned on a buffer layer side has an n-type impurity concentration larger than a region of the channel layer positioned on a barrier layer side, and the buffer layer is made of nitride semiconductor having a band gap wider than that of the channel layer. The channel layer is made of GaN and the buffer layer is made of AlGaN. The channel layer has a channel lower layer containing n-type impurities at an intermediate concentration and a main channel layer formed thereon and containing n-type impurities at a low concentration.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first nitride semiconductor layer formed over a substrate;
a second nitride semiconductor layer formed on the first nitride semiconductor layer;
a third nitride semiconductor layer formed on the second nitride semiconductor layer and made of nitride semiconductor having a band gap wider than that of the second nitride semiconductor layer;
a trench penetrating through the third nitride semiconductor layer to reach a…

Assignees

• Renesas Electronics Corp

Inventors

• Kawai Tohru
• Inoue Takashi
• Nakayama Tatsuo
• Okamoto Yasuhiro
• Miyamoto Hironobu

Classifications

• H10W20/0698

  Electricity · mapped topic

• H10D64/257

  Electricity · mapped topic

• H10D64/62

  Electricity · mapped topic

• H10D62/8503

  Electricity · mapped topic

• H10D62/307

  Electricity · mapped topic