Semiconductor light emitting device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-8963189-B2
Application number	US-201113052250-A
Country	US
Kind code	B2
Filing date	Mar 21, 2011
Priority date	Jun 7, 2010
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.

First claim

What is claimed is:

1. A semiconductor light emitting device, comprising:
a plurality of semiconductor layers, each of the semiconductor layers including a first major surface, a second major surface opposite to the first major surface and a light emitting layer;
a plurality of first electrodes, each of the first electrodes provided on a region including the light emitting layer of the second major surface;
a plurality of second electrodes, each of the second electrodes provid…

Assignees

• Akimoto Yosuke
• Kojima Akihiro
• Izuka Miyuki
• Sugizaki Yoshiaki
• Toshiba Kk

Inventors

• Akimoto Yosuke
• Kojima Akihiro
• Izuka Miyuki
• Sugizaki Yoshiaki

Classifications

• H10H20/018

  Electricity · mapped topic

• H10H29/14

  Electricity · mapped topic

• H10H20/8506

  Electricity · mapped topic

• H10H20/857 Primary

  Electricity · mapped topic

• H01L27/153

  Electricity · mapped topic