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US-12183868-B2 · Dec 31, 2024 · US
Light emitting diode having distributed Bragg reflector
US8963183B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963183-B2 |
| Application number | US-201313760637-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 6, 2013 |
| Priority date | Jul 28, 2010 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light.
First claim
Opening claim text (preview).
What is claimed is: 1. A light-emitting diode (LED), comprising: a substrate having a first surface and an opposing second surface; a light-emitting structure disposed on the first surface of the substrate, the light-emitting structure comprising: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor l…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8963183B2 cover?
- A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-ty…
- Who is the assignee on this patent?
- Seoul Viosys Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10H20/841. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).