Integrated chip and manufacturing method therefor, and full-color integrated chip and display panel
US-12183868-B2 · Dec 31, 2024 · US
US8963178B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8963178-B2 |
| Application number | US-201113023876-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 9, 2011 |
| Priority date | Nov 13, 2009 |
| Publication date | Feb 24, 2015 |
| Grant date | Feb 24, 2015 |
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Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.
Opening claim text (preview).
What is claimed is: 1. A light emitting diode chip, comprising: a substrate comprising a first surface and a second surface: a light emitting structure arranged on the first surface of the substrate, the light emitting structure comprising an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer; a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to refl…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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