Light emitting diode chip having distributed bragg reflector and method of fabricating the same

US8963178B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8963178-B2
Application numberUS-201113023876-A
CountryUS
Kind codeB2
Filing dateFeb 9, 2011
Priority dateNov 13, 2009
Publication dateFeb 24, 2015
Grant dateFeb 24, 2015

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  2. Abstract

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  5. First independent claim

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Abstract

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Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to reflect light emitted from the light emitting structure, and a metal layer arranged on the distributed Bragg reflector, wherein the distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.

First claim

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What is claimed is: 1. A light emitting diode chip, comprising: a substrate comprising a first surface and a second surface: a light emitting structure arranged on the first surface of the substrate, the light emitting structure comprising an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer; a distributed Bragg reflector arranged on the second surface of the substrate, the distributed Bragg reflector to refl…

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What does patent US8963178B2 cover?
Exemplary embodiments of the present invention disclose a light emitting diode chip including a substrate having a first surface and a second surface, a light emitting structure arranged on the first surface of the substrate and including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a distributed Bragg reflector a…
Who is the assignee on this patent?
Lee Sum Geun, Jin Sang Ki, Shin Jin Cheol, and 3 more
What technology area does this patent fall under?
Primary CPC classification H10H20/841. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).